arXiv · cond-mat/0610524
Millisecond spin-flip times of donor-bound electrons in GaAs
Abstract
We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and measurements of electrons in quantum dots.
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Kai-Mei C. Fu, Wenzheng Yeo, Susan Clark, Charles Santori, Colin Stanley, M. C. Holland, Yoshihisa Yamamoto. 2006-10-18. Millisecond spin-flip times of donor-bound electrons in GaAs. https://doi.org/10.1103/physrevb.74.121304
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