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arXiv · cond-mat/0610679

Energy Dependent Tunneling in a Quantum Dot

K. MacLean·S. Amasha·Iuliana P. Radu·D. M. Zumbuhl·M. A. Kastner·M. P. Hanson·A. C. Gossard
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Abstract

We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.

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K. MacLean, S. Amasha, Iuliana P. Radu, D. M. Zumbuhl, M. A. Kastner, M. P. Hanson, A. C. Gossard. 2006-10-25. Energy Dependent Tunneling in a Quantum Dot. https://doi.org/10.1103/physrevlett.98.036802

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