arXiv · cond-mat/0610806
On the possibility of level broadening in a quantum dot due to electrostatic interaction with a gate electrode
Abstract
In this article, we consider a quantum dot system which is interacting with a spatially separated metallic gate electrode via direct Coulomb interaction. Here, the gate electrode is described by an idealized two-dimensional electron gas. Due to Coulomb scattering effects, the latter may introduce level broadening to the quantum dot system.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
K. M. Indlekofer. 2006-11-01. On the possibility of level broadening in a quantum dot due to electrostatic interaction with a gate electrode. https://arxiv.org/abs/cond-mat/0610806
Cite the original work for its findings. Save a collection to share your selection of sources.