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Unusual field and temperature dependence of Hall effect in graphene

L. A. Falkovsky
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Abstract

We calculate the classic Hall conductivity and mobility of the undoped and doped (or in the gate voltage) graphene as a function of temperature, magnetic field, and carrier concentration. Carrier collisions with defects and acoustic phonons are taken into account. The Hall resistivity varies almost linearly with temperature. The magnetic field dependence of resistivity and mobility is anomalous in weak magnetic fields. There is the square root contribution from the field in the resistivity. The Hall mobility diverges logarithmically with the field for low doping.

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L. A. Falkovsky. 2006-11-19. Unusual field and temperature dependence of Hall effect in graphene. https://doi.org/10.1103/physrevb.75.033409

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