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Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures

G. D. Scott·M. Xiao·E. T. Croke·E. Yablonovitch·H. W. Jiang
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Abstract

Metallization of Schottky surface gates by sputtering Au on strained Si/SiGe heterojunctions enables the depletion of the two dimensional electron gas (2DEG) at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of sub-micron Au electrodes sputtered onto Si/SiGe without the need of a wetting layer.

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G. D. Scott, M. Xiao, E. T. Croke, E. Yablonovitch, H. W. Jiang. 2006-11-06. Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures. https://doi.org/10.1063/1.2430935

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