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Impurity-doping induced ferroelectricity in frustrated antiferromagnet CuFeO2

S. Seki·Y. Yamasaki·Y. Shiomi·S. Iguchi·Y. Onose·Y. Tokura
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Abstract

Dielectric responses have been investigated on the triangular-lattice antiferromagnet CuFeO2 and its site-diluted analogs CuFe1-xAlxO2 (x=0.01 and 0.02) with and without application of magnetic field. We have found a ferroelectric behavior at zero magnetic field for x=0.02. At any doping level, the onset field of the ferroelectricity always coincides with that of the noncollinear magnetic structure while the transition field dramatically decreases to zero field with Al doping. The results imply the further possibility of producing the ferroelectricity by modifying the frustrated spin structure in terms of site-doping and external magnetic field.

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S. Seki, Y. Yamasaki, Y. Shiomi, S. Iguchi, Y. Onose, Y. Tokura. 2006-11-09. Impurity-doping induced ferroelectricity in frustrated antiferromagnet CuFeO2. https://doi.org/10.1103/physrevb.75.100403

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