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Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy

F. Rol·S. Founta·H. Mariette·B. Daudin·Le Si Dang·J. Bleuse·D. Peyrade·J. -M. Gerard·B. Gayral
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Abstract

We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to spectral diffusion. Such linewidths are narrow enough to probe the inelastic coupling of acoustic phonons to confined carriers as a function of temperature. This study indicates that the carriers are laterally localized on a scale that is much smaller than the quantum dot size. This conclusion is further confirmed by the analysis of the decay time of the luminescence.

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F. Rol, S. Founta, H. Mariette, B. Daudin, Le Si Dang, J. Bleuse, D. Peyrade, J. -M. Gerard, B. Gayral. 2006-11-24. Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy. https://doi.org/10.1103/physrevb.75.125306

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