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Energy Transport between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor

J. M. Kivioja·M. Prunnila·S. Novikov·P. Kuivalainen·J. Ahopelto
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Abstract

The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-temperature MBE grown Mn_{x}Ga_{1-x}As samples had manganese concentrations x=3.7 % and 4.0 %. Curie temperatures estimated from temperatures of peak resistivities were 60 K and 62 K, respectively.

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J. M. Kivioja, M. Prunnila, S. Novikov, P. Kuivalainen, J. Ahopelto. 2006-11-28. Energy Transport between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor. https://doi.org/10.1063/1.2730349

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