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Electronic charge reconstruction of doped Mott insulators in multilayered nanostructures

Ling Chen·J. K. Freericks
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Abstract

Dynamical mean-field theory is employed to calculate the electronic charge reconstruction of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers sandwiching barrier planes of a strongly correlated material (that can be tuned through the metal-insulator Mott transition). The main focus is on barriers that are doped Mott insulators, and how the electronic charge reconstruction can create well-defined Mott insulating regions in a device whose thickness is governed by intrinsic materials properties, and hence may be able to be reproducibly made.

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Ling Chen, J. K. Freericks. 2006-12-13. Electronic charge reconstruction of doped Mott insulators in multilayered nanostructures. https://doi.org/10.1103/physrevb.75.125114

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