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Electrical spin injection and detection in an InAs quantum well

Hyun Cheol Koo·Hyunjung Yi·Jae-Beom Ko·Joonyeon Chang·Suk-Hee Han·Donghwa Jung·Seon-Gu Huh·Jonghwa Eom
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Abstract

We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring NiFe electrode. The observed spin diffusion length is 1.8 um at 20 K. The injected spin polarization across the NiFe/InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Our experimental results will contribute significantly to the realization of a practical spin field effect transistor.

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Hyun Cheol Koo, Hyunjung Yi, Jae-Beom Ko, Joonyeon Chang, Suk-Hee Han, Donghwa Jung, Seon-Gu Huh, Jonghwa Eom. 2006-12-22. Electrical spin injection and detection in an InAs quantum well. https://doi.org/10.1063/1.2430688

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