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Self-Organized Formation of Fractal and Regular Pores in Semiconductors

Jens Christian Claussen·Jürgen Carstensen·Marc Christophersen·Sergiu Langa·Helmut Föll
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Abstract

Electrochemical etching of semiconductors, beside technical applications, provides an interesting experimental setup for self-organized structure formation capable of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model: all dissolution processes are assumed to occur inhomogeneously in time and space as a Current Burst (CB); properties and interactions between CB's are described by a number of material- and chemistry- dependent ingredients, like passivation and aging of surfaces in different crystallographic orientations, giving a qualitative understanding of resulting pore morphologies.

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Jens Christian Claussen, Jürgen Carstensen, Marc Christophersen, Sergiu Langa, Helmut Föll. 2006-12-30. Self-Organized Formation of Fractal and Regular Pores in Semiconductors. https://doi.org/10.1007/978-3-662-07969-0_7

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