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Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots

R. Seguin·A. Schliwa·T. D. Germann·S. Rodt·M. Winkelnkemper·K. Pötschke·A. Strittmatter·U. W. Pohl·T. Hammerschmidt·P. Kratzer·D. Bimberg
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Abstract

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different excitonic complexes change dramatically. The results are compared to model calculations within eight-band k.p theory and the configuration interaction method, suggesting a change of electron and hole wave function shape and relative position.

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R. Seguin, A. Schliwa, T. D. Germann, S. Rodt, M. Winkelnkemper, K. Pötschke, A. Strittmatter, U. W. Pohl, T. Hammerschmidt, P. Kratzer, D. Bimberg. 2007-01-02. Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots. https://doi.org/10.1063/1.2424446

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