arXiv · cond-mat/0701398
Theory of Spin Transport Across Domain-Walls in (Ga,Mn)As
Abstract
We present results of numerical calculations of domain-wall resistance in the ferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Buttiker formalism and the tight binding method. Taking into account the full valence band structure we predict the magnitude of the domain-wall resistance without disorder and compare it to experimental values. Next we add disorder to the model and study numerically both small and large disorder regime.
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Rafal Oszwaldowski, Jacek A. Majewski, Tomasz Dietl. 2007-01-17. Theory of Spin Transport Across Domain-Walls in (Ga,Mn)As. https://doi.org/10.1063/1.2730367
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