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Interminiband Rabi oscillations in biased semiconductor superlattices

Pavel Abumov·D. W. L. Sprung
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Abstract

Carrier dynamics at energy level anticrossings in biased semiconductor superlattices, was studied in the time domain by solving the time-dependent Schroedinger equation. The resonant nature of interminiband Rabi oscillations has been explicitly demonstrated to arise from interference of intrawell and Bloch oscillations. We also report a simulation of direct Rabi oscillations across three minibands, in the high field regime, due to interaction between three strongly coupled minibands.

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BibTeXRIS

Pavel Abumov, D. W. L. Sprung. 2007-02-08. Interminiband Rabi oscillations in biased semiconductor superlattices. https://doi.org/10.1103/physrevb.75.165421

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