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Interference induced metallic-like behavior of a two-dimensional hole gas in asymmetric GaAs/In$_{x}$Ga$_{1-x}$As/GaAs quantum well

G. M. Minkov·A. V. Germanenko·A. A. Sherstobitov·B. N. Zvonkov
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Abstract

The temperature and magnetic field dependences of the conductivity of the heterostructures with asymmetric In$_x$Ga$_{1-x}$As quantum well are studied. It is shown that the metallic-like temperature dependence of the conductivity observed in the structures investigated is quantitatively understandable within the whole temperature range, $T=0.4-20$ K. It is caused by the interference quantum correction at fast spin relaxation for 0.4 K$ < T < 1.5$ K. At higher temperatures, 1.5 K$ 4-6$ K, the metallic-like behavior is determined by the phonon scattering.

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G. M. Minkov, A. V. Germanenko, A. A. Sherstobitov, B. N. Zvonkov. 2007-02-09. Interference induced metallic-like behavior of a two-dimensional hole gas in asymmetric GaAs/In$_{x}$Ga$_{1-x}$As/GaAs quantum well. https://doi.org/10.1103/physrevb.75.193311

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