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Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires

Benjamin W. Jacobs·Virginia M. Ayres·Mihail P. Petkov·Joshua B. Halpern·MaoQe He·Andrew D. Baczewski·Kaylee McElroy·Martin A. Crimp·Jiaming Zhang·Harry C. Shaw
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Abstract

We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction, electron dispersive spectroscopy, electron energy loss spectroscopy, and fast Fourier transform techniques. A mechanism for growth is identified.

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Benjamin W. Jacobs, Virginia M. Ayres, Mihail P. Petkov, Joshua B. Halpern, MaoQe He, Andrew D. Baczewski, Kaylee McElroy, Martin A. Crimp, Jiaming Zhang, Harry C. Shaw. 2007-02-16. Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires. https://doi.org/10.1021/nl062871y

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