arXiv · cond-mat/0702625
Hole doping MgB$_2$ without chemical substitution
Abstract
Structures for realizing hole-doped MgB$_2$ without appealing to chemical substitutions are proposed. These structures which consist of alternating MgB$_2$ and graphene layers have small excess energy compared to bulk graphite and MgB$_2$. Density functional theory based first-principles electronic structure calculations show significant charge transfer from the MgB$_2$ layer to graphene, resulting in effectively hole-doped MgB$_2$. Substantial enhancement in the density of states at the Fermi level of the proposed structure is predicted.
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Peihong Zhang, Susumu Saito, Steven G. Louie, Marvin L. Cohen. 2007-02-27. Hole doping MgB$_2$ without chemical substitution. https://arxiv.org/abs/cond-mat/0702625
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