SearcharxivSearch

arXiv · cond-mat/0702661

Low temperature specific heat and possible gap to magnetic excitations in the Heisenberg pyrochlore antiferromagnet Gd2Sn207

Abstract

The Gd2Sn2O7 pyrochlore Heisenberg antiferromagnet displays a phase transition to a four sublattice Neel ordered state at a temperature near 1 K. Despite the seemingly conventional nature of the ordered state, the specific heat has been found to be described in the temperature range 350-800 mK by an anomalous T-squared power law. A similar temperature dependence has also been reported for Gd2Ti2O7, another pyrochlore Heisenberg material. Such anomalous T-squared behavior in Cv has been argued to be correlated to an unusual energy-dependence of the density of states which also seemingly manifests itself in low-temperature spin fluctuations found in muon spin relaxation experiments. In this paper, we report calculations of Cv that consider spin wave like excitations out of the Neel order observed in Gd2Sn2O7 and argue that the parametric T-squared behavior does not reflect the true low-energy excitations of Gd2Sn2O7. Rather, we find that the low-energy excitations of this material are antiferromagnetic magnons gapped by single-ion and dipolar anisotropy effects, and that the lowest temperature of 350 mK considered in previous specific heat measurements accidentally happens to coincide with a crossover temperature below which magnons become thermally activated and Cv takes an exponential form. We argue that further specific heat measurements that extend down to at least 100 mK are required in order to ascribe an unconventional description of magnetic excitations out of the ground state of Gd2Sn2O7 or to invalidate the standard picture of gapped excitations proposed herein.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Adrian Del Maestro, Michel J. P. Gingras. 2007-06-25. Low temperature specific heat and possible gap to magnetic excitations in the Heisenberg pyrochlore antiferromagnet Gd2Sn207. https://doi.org/10.1103/physrevb.76.064418

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci