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Fabrication of Nano-Gapped Single-Electron Transistors for Transport Studies of Individual Single-Molecule Magnets

J. J. Henderson·C. M. Ramsey·E. del Barco·A. Mishra·G. Christou
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Abstract

Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1-3 nm gaps between which the SMM can be situated. Conductance through a single Mn12(3-thiophenecarboxylate) displays the coulomb blockade effect with several excitations within +/- 40 meV.

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J. J. Henderson, C. M. Ramsey, E. del Barco, A. Mishra, G. Christou. 2007-03-01. Fabrication of Nano-Gapped Single-Electron Transistors for Transport Studies of Individual Single-Molecule Magnets. https://doi.org/10.1063/1.2671613

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