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Control of optical emission in doped GaAs/AlGaAs nanofabricated quantum dots

Sokratis Kalliakos·Cesar Pascual Garcia·Vittorio Pellegrini·Marian Zamfirescu·Lucia Cavigli·Massimo Gurioli·Anna Vinattieri·Aron Pinczuk·Brian S. Dennis·Loren N. Pfeiffer·Ken W. West
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Abstract

Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Excitonic-like and biexcitonic-like emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated QDs for applications in areas that require fine control of optical emission.

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Sokratis Kalliakos, Cesar Pascual Garcia, Vittorio Pellegrini, Marian Zamfirescu, Lucia Cavigli, Massimo Gurioli, Anna Vinattieri, Aron Pinczuk, Brian S. Dennis, Loren N. Pfeiffer, Ken W. West. 2007-03-02. Control of optical emission in doped GaAs/AlGaAs nanofabricated quantum dots. https://arxiv.org/abs/cond-mat/0703059

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