A Graphene Field-Effect Device

M. C. Lemme; T. J. Echtermeyer; M. Baus; H. Kurz

doi:10.1109/led.2007.891668

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A Graphene Field-Effect Device

M. C. Lemme·T. J. Echtermeyer·M. Baus·H. Kurz

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Abstract

In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.

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M. C. Lemme, T. J. Echtermeyer, M. Baus, H. Kurz. 2007-03-08. A Graphene Field-Effect Device. https://doi.org/10.1109/led.2007.891668

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