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Hole states in wide band-gap diluted magnetic semiconductors and oxides

Tomasz Dietl
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Abstract

Puzzling disagreement between photoemission and optical findings in magnetically doped GaN and ZnO is explained within a generalized alloy theory. The obtained results show that the strong coupling between valence-band holes and localized spins gives rise to a mid-gap Zhang-Rice-like state, to a sign reversal of the apparent p-d exchange integral, and to an increase of the band-gap with the magnetic ion concentration.

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Tomasz Dietl. 2007-03-11. Hole states in wide band-gap diluted magnetic semiconductors and oxides. https://doi.org/10.1103/physrevb.77.085208

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