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Transit-Time Spin Field-Effect-Transistor

Ian Appelbaum·Douwe Monsma
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Abstract

We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary semiconductor. This provides the possibility of realizing a spin field-effect-transistor in Si, using electrostatic transit-time control in a perpendicular magnetic field, rather than Rashba effect with spin-orbit interaction.

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Ian Appelbaum, Douwe Monsma. 2007-03-12. Transit-Time Spin Field-Effect-Transistor. https://doi.org/10.1063/1.2752015

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