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Characterization of the Schottky Barrier in SrRuO3/Nb:SrTiO3 Junctions

Y. Hikita·Y. Kozuka·T. Susaki·H. Takagi·H. Y. Hwang
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Abstract

Internal photoemission spectroscopy was used to determine the Schottky barrier height in rectifying SrRuO3/Nb-doped SrTiO3 junctions for 0.01 wt % and 0.5 wt % Nb concentrations. Good agreement was obtained with the barrier height deduced from capacitance-voltage measurements, provided that a model of the nonlinear permittivity of SrTiO3 was incorporated in extrapolating the built-in potential, particularly for high Nb concentrations. Given the generic polarizability of perovskites under internal/external electric fields, internal photoemission provides a valuable independent probe of the interface electronic structure.

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Y. Hikita, Y. Kozuka, T. Susaki, H. Takagi, H. Y. Hwang. 2007-03-14. Characterization of the Schottky Barrier in SrRuO3/Nb:SrTiO3 Junctions. https://doi.org/10.1063/1.2719157

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