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An insight into the electronic structure of graphene: from monolayer to multi-layer

Z. F. Wang·Huaixiu Zheng·Q. W. Shi·Jie Chen·Jinlong Yang·J. G. Hou
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Abstract

In this paper, we analytically investigate the electronic structure of Bernal stacking (AB stacking) graphene evolving from monolayer (a zero-gap semiconductor with a linear Dirac-like spectrum around the Fermi energy) to multi-layer (semi-metal bulk graphite). We firstly derive a real space analytical expression for the free Green's function (propagator) of multi-layer graphene based on the effective-mass approximation. The simulation results exhibit highly spatial anisotropy with three-fold rotational symmetry. By combining with the STM measurement of d2I/dV2 (the second derivative of current), we also provide a clear high-throughput and non-destructive method to identify graphene layers. Such a method is lacking in the emerging graphene research.

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Z. F. Wang, Huaixiu Zheng, Q. W. Shi, Jie Chen, Jinlong Yang, J. G. Hou. 2007-03-15. An insight into the electronic structure of graphene: from monolayer to multi-layer. https://arxiv.org/abs/cond-mat/0703422

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