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Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

Guy Brammertz·Yves Mols·Stefan Degroote·Vasyl Motsnyi·Maarten Leys·Gustaaf Borghs·Matty Caymax
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Abstract

Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and extensively analyzed by low-temperature photoluminescence (PL) spectroscopy.

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Guy Brammertz, Yves Mols, Stefan Degroote, Vasyl Motsnyi, Maarten Leys, Gustaaf Borghs, Matty Caymax. 2007-03-26. Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates. https://arxiv.org/abs/cond-mat/0703661

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