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Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect

Ryuichi Masutomi·Masayuki Hio·Toshimitsu Mochizuki·Tohru Okamoto
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Abstract

We have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at {\it in situ} cleaved surfaces of {\it p}-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag-coverage and the annealing temperature in the range of 15-40 K. The annealing effect suggests that the surface morphology strongly affects the properties of the two-dimensional electron systems.

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Ryuichi Masutomi, Masayuki Hio, Toshimitsu Mochizuki, Tohru Okamoto. 2007-04-06. Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect. https://doi.org/10.1063/1.2740579

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