Simple-layered high mobility field effect heterostructured two-dimensional electron device

R. L. Willett; L. N. Pfeiffer; K. W. West

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arXiv · cond-mat/0703718

Simple-layered high mobility field effect heterostructured two-dimensional electron device

R. L. Willett·L. N. Pfeiffer·K. W. West

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Abstract

We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple metallic overlapping gate, obviating dopant layers. The resultant devices demonstrate adjustable electron densities and mobilities larger than 8x106 cm2/V-sec at the highest densities of 2.4x1011/cm2. This device type provides an experimental avenue for studying electron correlations and may answer demands for routine fabrication of practical HEMTs.

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R. L. Willett, L. N. Pfeiffer, K. W. West. 2007-03-27. Simple-layered high mobility field effect heterostructured two-dimensional electron device. https://arxiv.org/abs/cond-mat/0703718

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