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X-ray Absorption Study of Pulsed Laser Deposited Boron Nitride Films

A. Chaiken·L. J. Terminello·J. Wong·G. L. Doll·T. Sato
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Abstract

B and N K-edge x-ray absorption spectroscopy measurements have been performed on three BN thin films grown on Si substrates using ion-assisted pulsed laser deposition. Comparison of the films' spectra to those of several single-phase BN powder standards shows that the films consist primarily of $sp^2$ bonds. Other features in the films' spectra suggest the presence of secondary phases, possibly cubic or rhombohedral BN. Films grown at higher deposition rates and higher ion-beam voltages are found to be more disordered, in agreement with previous work.

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A. Chaiken, L. J. Terminello, J. Wong, G. L. Doll, T. Sato. 1993-11-26. X-ray Absorption Study of Pulsed Laser Deposited Boron Nitride Films. https://arxiv.org/abs/cond-mat/9311058

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