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On the Origin of the -4.4 eV Band in CdTe(100)"

D. Olguin·R. Baquero
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Abstract

We calculate the bulk- (infinite system), (100)-bulk-projected- and (100)-Surface-projected Green's functions using the Surface Green's Function Matching method (SGFM) and an empirical tight-binding hamiltonian with tight-binding parameters (TBP) that describe well the bulk band structure of CdTe. In particular, we analyze the band (B--4) arising at --4.4 eV from the top of the valence band at $Γ$ according to the results of Niles and Höchst and at -4.6 eV according to Gawlik {\it et al.} both obtained by Angle-resolved photoelectron spectroscopy (ARPES). We give the first theoretical description of this band.

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D. Olguin, R. Baquero. 1994-03-16. On the Origin of the -4.4 eV Band in CdTe(100)". https://doi.org/10.1103/physrevb.50.1980

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