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Current-voltage characteristics of a tunnel junction with resonant centers

T. Ivanov·V. Valtchinov
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Abstract

We calculate the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy $E_c$ between two electrons with opposite spins simultaneously residing on the impurity is introduced by an Anderson Hamiltonian. At low temperatures $T \ll E_c$ the I-V characteristic is linear in $V$ both for $V E_c$ and changes slope at $V=E_c$. This behavior reflects the energy spectrum of the impurity electrons - the finite value of the charging energy $E_c$. At $T \sim E_c$ the junction reveals an ohmic-like behavior as a result of the smearing out of the charging effects by the thermal fluctuations.

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T. Ivanov, V. Valtchinov. 1994-05-10. Current-voltage characteristics of a tunnel junction with resonant centers. https://doi.org/10.1103/physrevb.50.5721

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