Charge Transfer Excitons and the Metal-Insulator Transition in the High Temperature Superconductors

C. Vermeulen; W. Barford; E. R. Gagliano

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Charge Transfer Excitons and the Metal-Insulator Transition in the High Temperature Superconductors

C. Vermeulen·W. Barford·E. R. Gagliano

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Abstract

The effects of the nearest neighbour Coulomb repulsion, V, are considered in the one dimensional copper-oxide chain using the modified Lanczos method. Above a critical value of V we find that charge transfer excitons are the lowest lying energy exitations in the insulating phase. Close to the metal-insulator transition and $V=0$ there is good `particle-hole' symmetry, showing that the mapping from a two band model to a one band model is appropriate. The effect of the nearest neighbour repulsion is to create states in the gap and to pin the Fermi level upon hole doping.

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C. Vermeulen, W. Barford, E. R. Gagliano. 1994-07-01. Charge Transfer Excitons and the Metal-Insulator Transition in the High Temperature Superconductors. https://arxiv.org/abs/cond-mat/9407004

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