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Electronic Structure of Fibonacci Si Delta-Doped Gaas

F. Dominguez-Adame·E. Macia·B. Mendez
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Abstract

We study the electronic structure of a new type of Fibonacci superlattice based on Si $δ$-doped GaAs. Assuming that $δ$-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to $δ$-doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope-functions.

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F. Dominguez-Adame, E. Macia, B. Mendez. 1994-09-16. Electronic Structure of Fibonacci Si Delta-Doped Gaas. https://doi.org/10.1016/0375-9601(94)91281-5

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