Thomas-Fermi approach to resonant tunneling in delta-doped diodes

Enrique Diez; Francisco Dominguez-Adame; Angel Sanchez

doi:10.1063/1.359404

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Thomas-Fermi approach to resonant tunneling in delta-doped diodes

Enrique Diez·Francisco Dominguez-Adame·Angel Sanchez

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Abstract

We study resonant tunneling in B-$δ$-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligible. Our theoretical results are in very good agreement with recent experimental observations of NDR in this type of diodes.

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Enrique Diez, Francisco Dominguez-Adame, Angel Sanchez. 1994-11-02. Thomas-Fermi approach to resonant tunneling in delta-doped diodes. https://doi.org/10.1063/1.359404

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