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Localization in Semiconductor Quantum Wire Nanostructures

Dongzi Liu·S. Das Sarma
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Abstract

Localization properties of quasi-one dimensional quantum wire nanostructures are investigated using the transfer matrix-Lyapunov exponent technique. We calculate the localization length as a function of the effective mean-field mobility assuming the random disorder potential to be arising from dopant-induced short-range $δ$-function or finite-range Gaussian impurity scattering. The localization length increases approximately linearly with the effective mobility, and is also enhanced by finite-range disorder. There is a sharp reduction in the localization length when the chemical potential crosses into the second subband.

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Dongzi Liu, S. Das Sarma. 1995-01-24. Localization in Semiconductor Quantum Wire Nanostructures. https://doi.org/10.1103/physrevb.51.13821

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