Density-Dependent Squeezing of Excitons in Highly Excited Semiconductors

Nguyen Hong Quang

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Density-Dependent Squeezing of Excitons in Highly Excited Semiconductors

Nguyen Hong Quang

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Abstract

The time evolution from coherent states to squeezed states of high density excitons is studied theoretically based on the boson formalism and within the Random Phase Approximation. Both the mutual interaction between excitons and the anharmonic exciton-photon interaction due to phase-space filling of excitons are included in consideration. It is shown that the exciton squeezing depends strongly on the exciton density in semiconductors and becomes smaller with increasing the latter.

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Nguyen Hong Quang. 1995-07-31. Density-Dependent Squeezing of Excitons in Highly Excited Semiconductors. https://arxiv.org/abs/cond-mat/9507140

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