Theory of interstitial oxygen in silicon and germanium

Emilio Artacho; Felix Yndurain

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arXiv · cond-mat/9509127

Theory of interstitial oxygen in silicon and germanium

Emilio Artacho·Felix Yndurain

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Abstract

The interstitial oxygen centers in silicon and germanium are reconsidered and compared in an analysis based on the first-principles total-energy determination of the potential-energy surface of the centers, and a calculation of their respective low energy excitations and infrared absorption spectra. The total-energy calculations reveal unambiguously that interstitial oxygen is quantum delocalized, the delocalization being essentially different in silicon and in germanium. Oxygen in silicon lies at the bond center site in a highly anharmonic potential well, whereas in germanium it is found to rotate almost freely around the original Ge-Ge bond it breaks. This different delocalization is the origin of the important differences in the low energy excitation spectra: there is a clear decoupling in rotation and vibration excitations in germanium, giving different energy scales (1 cm$^{-1}$ for the rotation, 200 cm$^{-1}$ for the $ν_2$ mode), whereas both motions are non-trivially mixed in silicon, in a common energy scale of around 30 cm$^{-1}$. The calculation of the vibrational spectra of the defect reveals the existence of vibrational modes (related to the $ν_1$ mode) never been experimentally observed due to their weak infrared activity. It is found that the combination of these modes with the well established $ν_3$ asymmetric stretching ones is the origin of the experimentally well characterized modes at frequencies above the $ν_3$ mode frequency.

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Emilio Artacho, Felix Yndurain. 1995-09-20. Theory of interstitial oxygen in silicon and germanium. https://arxiv.org/abs/cond-mat/9509127

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