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Ballistic Composite Fermions in Semiconductor Nanostructures

J. E. F. Frost·C. -T. Liang·D. R. Mace·M. Y. Simmons·D. A. Ritchie·M. Pepper
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Abstract

We report the results of two fundamental transport measurements at a Landau level filling factor $ν$ of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B~=~0 and $ν~=~ 1/2$. The experimental results demonstrate semi-classical charge transport by composite fermions, which consist of electrons bound to an even number of flux quanta.

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J. E. F. Frost, C. -T. Liang, D. R. Mace, M. Y. Simmons, D. A. Ritchie, M. Pepper. 1996-01-17. Ballistic Composite Fermions in Semiconductor Nanostructures. https://doi.org/10.1103/physrevb.53.9602

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