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Weak and Strong Localization in Low-Dimensional Semiconductor Structures

S. -R. Eric Yang·J. Rammer
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Abstract

The dependence of the localization length on the number of occupied subbands $N$ in low-dimensional semiconductors is investigated. The localization length is shown to be proportional to the number of occupied subbands in quasi-one-dimensional quantum wires while it grows exponentially with $N$ in quasi-two-dimensional systems. Also a weak localization theory is developed for large N with a well-defined small expansion parameter $1/N$. The temperature dependence of the conductivity deduced using this perturbation theory agrees with the experimentally observed dependence.

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S. -R. Eric Yang, J. Rammer. 1996-01-24. Weak and Strong Localization in Low-Dimensional Semiconductor Structures. https://doi.org/10.1103/physrevb.53.9568

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