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Magnetic-field-enhanced outgoing excitonic resonance in multi-phonon Raman scattering from polar semiconductors

I. G. Lang·A. V. Prokhorov·M. Cardona·V. I. Belitsky·A. Cantarero·S. T. Pavlov
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Abstract

A combined scattering mechanism involving the states of free electron-hole pairs (exciton continuum) and discrete excitons as intermediate states in the multi-phonon Raman scattering leads to (1) a strong increase of the scattering efficiency in the presence of a high magnetic field and to (2) an outgoing excitonic resonance: the two features are not compatible when only free pairs (leading to a strong increase of the scattering efficiency under the applied magnetic field) or discrete excitons (resulting in the outgoing resonance at the excitonic gap) are taken into account.

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I. G. Lang, A. V. Prokhorov, M. Cardona, V. I. Belitsky, A. Cantarero, S. T. Pavlov. 1996-02-21. Magnetic-field-enhanced outgoing excitonic resonance in multi-phonon Raman scattering from polar semiconductors. https://doi.org/10.1088/0953-8984%2F8%2F36%2F027

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