Non-equilibrium thermodynamic description of junctions in semiconductor devices

Gabriel Gomila; Miguel Rubi

doi:10.1016/s0378-4371(96)00320-2

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arXiv · cond-mat/9603066

Non-equilibrium thermodynamic description of junctions in semiconductor devices

Gabriel Gomila·Miguel Rubi

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Abstract

The methods of non-equilibrium thermodynamics of systems with an interface have been applied to the study of transport processes in semiconductor junctions. A complete phenomenological model for drift-diffusion processes in a junction has been derived, which includes, from first principles, both surface equations and boundary conditions, together with the usual drift-diffusion equations for the bulks. In this way a self-consistent characterisation of the whole system, bulks and interface, has been obtained in a common framework. The completeness of the model has been shown and a simple application to metal-semiconductor junctions developed.

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Gabriel Gomila, Miguel Rubi. 1996-03-11. Non-equilibrium thermodynamic description of junctions in semiconductor devices. https://doi.org/10.1016/s0378-4371(96)00320-2

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