Magnetic Field-Induced Fano Profiles in the Absorption Coefficient of Semiconductors

V. I. Belitsky; A. Cantarero; S. T. Pavlov

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Magnetic Field-Induced Fano Profiles in the Absorption Coefficient of Semiconductors

V. I. Belitsky·A. Cantarero·S. T. Pavlov

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Abstract

A strongly asymmetric, Fano-like resonance profile has been found for magneto-absorption in the states of hot free electron-hole pairs scattered by defects in bulk semiconductors. The renormalization of the absorption profile, compared to that expected from the bare density of states in a high magnetic field, follows from a quasi-one-dimensional character of electronic excitations. The results are valid for absorption by the electronic states of large Landau quantum number where the Coulomb interaction should play a minor role. The resonance shape is in a good qualitattive agreement with experimental observations.

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V. I. Belitsky, A. Cantarero, S. T. Pavlov. 1996-03-20. Magnetic Field-Induced Fano Profiles in the Absorption Coefficient of Semiconductors. https://arxiv.org/abs/cond-mat/9603133

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