Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals

D. H. Cobden; B. A. Muzykantskii

doi:10.1103/physrevlett.75.4274

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arXiv · cond-mat/9605020

Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals

D. H. Cobden·B. A. Muzykantskii

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Abstract

We show that random telegraph signals in metal-oxide-silicon transistors at millikelvin temperatures provide a powerful means of investigating tunneling between a two-dimensional electron gas and a single defect state. The tunneling rate shows a peak when the defect level lines up with the Fermi energy, in excellent agreement with theory of the Fermi-edge singularity at finite temperature. This theory also indicates that defect levels are the origin of the dissipative two-state systems observed previously in similar devices.

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D. H. Cobden, B. A. Muzykantskii. 1996-05-03. Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals. https://doi.org/10.1103/physrevlett.75.4274

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