arXiv · cond-mat/9606114
Measurement of the conductance distribution function at a quantum Hall transition
Abstract
We study experimentally the reproducible conductance fluctuations between the quantum Hall plateaus in the conductance of two-terminal submicron silicon MOSFETs. For the dramatic fluctuations at the insulator-to-first-plateau transition we find a conductance distribution that is approximately uniform between zero and $e^2/h$. We point out that this is consistent with the prediction of random $S$-matrix theory for a conductor with single-channel leads in a magnetic field.
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D. H. Cobden, E. Kogan. 1996-10-24. Measurement of the conductance distribution function at a quantum Hall transition. https://doi.org/10.1103/physrevb.54.r17316
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