A Field Effect Transitor based on the Mott Transition in a Molecular Layer

C. Zhou; D. M. Newns; J. A. Misewich; P. C. Pattnaik

doi:10.1063/1.118285

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A Field Effect Transitor based on the Mott Transition in a Molecular Layer

C. Zhou·D. M. Newns·J. A. Misewich·P. C. Pattnaik

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Abstract

Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low ``ON'' impedance and high ``OFF'' impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed.

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C. Zhou, D. M. Newns, J. A. Misewich, P. C. Pattnaik. 1996-06-21. A Field Effect Transitor based on the Mott Transition in a Molecular Layer. https://doi.org/10.1063/1.118285

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