Electric field scaling at a B=0 metal-insulator transition in two dimensions

S. V. Kravchenko; D. Simonian; M. P. Sarachik; Whitney Mason; J. E. Furneaux

doi:10.1103/physrevlett.77.4938

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Electric field scaling at a B=0 metal-insulator transition in two dimensions

S. V. Kravchenko·D. Simonian·M. P. Sarachik·Whitney Mason·J. E. Furneaux

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Abstract

The non-linear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a true metal-insulator transition in this 2D system at B=0. Comparison with the temperature scaling yields separate determinations of the correlation length exponent, ν=1.5, and the dynamical exponent, z=0.8, close to the theoretical value z=1.

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S. V. Kravchenko, D. Simonian, M. P. Sarachik, Whitney Mason, J. E. Furneaux. 1996-08-24. Electric field scaling at a B=0 metal-insulator transition in two dimensions. https://doi.org/10.1103/physrevlett.77.4938

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