Charge Excitations in Doped Mott Insulator in One Dimension

Michiyasu Mori; Hidetoshi Fukuyama

doi:10.1143/jpsj.65.3604

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Charge Excitations in Doped Mott Insulator in One Dimension

Michiyasu Mori·Hidetoshi Fukuyama

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Abstract

The doped Mott insulator in one dimension has been studied based on the phase Hamiltonian with the Umklapp scattering process, in which the charge degree of freedom is described by the quantum sine-Gordon model. The well-known equivalence between the quantum sine-Gordon model and the massive Thirring model for the spinless fermion makes it clear that the Mott-Hubbard gap originates from the Umklapp scattering process as was indicated by Emery and Giamarchi. Compressibility, density-density correlation function, frequency dependence of optical conductivity and Drude weight have been calculated in the presence of the impurity scattering treated in the self-consistent Born approximation. It is seen that there exists a crossover behavior in the spectral weight of charge excitations: the acoustic mode is dominant in small wave number region while the optical excitations across the Mott-Hubbard gap lie in large wave number region and that this crossover wave number is reduced as the Mott transition is approached.

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Michiyasu Mori, Hidetoshi Fukuyama. 1996-09-18. Charge Excitations in Doped Mott Insulator in One Dimension. https://doi.org/10.1143/jpsj.65.3604

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