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Reflection symmetry at a B=0 metal-insulator transition in two dimensions

D. Simonian·S. V. Kravchenko·M. P. Sarachik
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Abstract

We report a remarkable symmetry between the resistivity and conductivity on opposite sides of the B=0 metal-insulator transition in a two-dimensional electron gas in high-mobility silicon MOSFET's. This symmetry implies that the transport mechanisms on the two sides are related.

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D. Simonian, S. V. Kravchenko, M. P. Sarachik. 1996-12-18. Reflection symmetry at a B=0 metal-insulator transition in two dimensions. https://doi.org/10.1103/physrevb.55.r13421

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