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Formation of localized hole states in complex oxides

H. Donnerberg·S. Toebben·A. Birkholz
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Abstract

Defect electrons (holes) play an important role in most technologically important complex oxides; many of which possess perovskite-related structures. In this contribution we present the first detailed characterization of localized hole states in such materials. Our investigations employ advanced embedded-cluster calculations which consistently include electron correlations and defect-induced lattice relaxations. This is necessary in order to account for the variety of possible hole-state manifestations.

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H. Donnerberg, S. Toebben, A. Birkholz. 1997-02-26. Formation of localized hole states in complex oxides. https://doi.org/10.1088/0953-8984%2F9%2F30%2F005

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