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The influence of crystal-field effects on the electronic transport properties of heavy-fermion systems: a semiphenomenological approach

M. Huth·F. B. Anders
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Abstract

The electronic transport properties of heavy-fermion systems were calculated based on a semiphenomenological approach to the lattice non-crossing approximation in the limit of infinite local correlations augmented by crystal-field effects. Within the scope of this calculation using the linearized Boltzmann theory in the relaxation time approximation the qualitative features of the temperature-dependent resistivity, the magnetoresistivity and the thermoelectric power can be successfully reproduced; this is exemplified by a comparison with experimental results on CeCu_2Si_2.

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M. Huth, F. B. Anders. 1997-05-01. The influence of crystal-field effects on the electronic transport properties of heavy-fermion systems: a semiphenomenological approach. https://arxiv.org/abs/cond-mat/9705013

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